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CHA2069-99F Datasheet(PDF) 2 Page - United Monolithic Semiconductors

Part # CHA2069-99F
Description  18-31GHz Low Noise Amplifier
PDF  8 Pages
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Manufacturer  UMS [United Monolithic Semiconductors]
Direct Link  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHA2069-99F Datasheet(HTML) 2 Page - United Monolithic Semiconductors

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CHA2069-99F
18-31GHz Low Noise Amplifier
Ref. : DSCHA20693246 - 03 Sep 13
2/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Electrical Characteristics
Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
16
31
Ghz
G
Gain
(1)
18
22
dB
G
Gain flatness
(1)
 1
 1.5
dB
NF
Noise figure
(1)
2.5
3.5
dB
VSWRin
Input VSWR
(1)
2.0:1
2.5:1
VSWRout
Ouput VSWR
(1)
2:0:1
2.5:1
IP3
3rd order intercept point
20
dBm
P1dB
Output power at 1dB gain compression
10
dBm
Id
Drain bias current
(2)
55
75
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at
the RF ports.
(2) This current is the typical value from the low noise low consumption biasing (B,D, E grounded)
Absolute Maximum Ratings (3)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
(5)
5.0
V
Pin
Maximum peak input power overdrive
(4)
+15
dBm
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options pp7



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