CHA2095a

RoHS COMPLIANT

Ref. : DSCHA20958147-27 May 08

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

36-40GHz Low Noise Very High Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2095a is a four-stage monolithic low

noise amplifier. It is designed for a wide range of

applications,

from

military

to

commercial

communication systems.

The circuit is manufactured with a pHEMT

process: 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Broadband performances

■ 3.5dB Noise Figure

■ 26dB gain

■ ±1.0dB gain flatness

■ Low DC power consumption, 90mA @ 3.5V

■ Chip size:

2.07 X 1.11 X 0.10 mm

Vd

Vd

Vg 1,2

Vg 3,4

In

Out

Typical on wafer measurements

0

5

10

15

20

25

30

30

35

40

45

50

55

Frequency (GHz)

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

36

40

GHz

G

Small signal gain

22

26

dB

P1dB

Output power at 1dB gain compression

8

10

dBm

NF

Noise figure

3.5

4.0

dB

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !