CHA2193

20-30GHz Low Noise Amplifier

Ref. : DSCHA21939042-11 Feb 99

2/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics for Narrowband Operation

Tamb = +25°C, Vd = 3.5V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

24

26

GHz

G

Small signal gain (1)

16

18

dB

∆G

Small signal gain flatness (1)

±0.5

dB

Is

Reverse isolation (1)

25

30

dB

NF

Noise figure

2.0

2.5

dB

P1dB

CW output power at 1dB compression (1)

6

8

dBm

VSWRin

Input VSWR (1)

1.8:1

2.0:1

VSWRout

Output VSWR (1)

1.8:1

2.0:1

Vd

DC Voltage

3.5

4

V

Id

Bias current

60

100

mA

(1) These values are representative for CW on-wafer measurements that are made without

bonding wires at the RF ports.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

4.0

V

Id

Drain bias current

120

mA

Vg

Gate bias voltage

-2.0 to +0.4

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.