20-40GHz Medium Power Amplifier

CHA3093c

Ref. : DSCHA30932158 -07-June-02

2/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd1,2,3,4 = 3.5V Id=330mA

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

20

40

GHz

G

Small signal gain [ 20GHz to 35GHz](1)

20

22

dB

G

Small signal gain (1)

18

dB

∆G

Small signal gain flatness (1) (Any 1GHz BW)

±0.5

dB

Is

Reverse isolation (1)

50

dB

P1dB

Pulsed output power at 1dB gain compression (1)

18

20

dBm

P3dB

Pulsed output power at 3dB gain compression (1)

20

22

dBm

IP3

3

29

dBm

PAE

Power added efficiency at saturation

10

%

VSWRin

Input VSWR (1)

1.2:1

2.0:1

VSWRout

Output VSWR (1)

2.0:1

3.0:1

NF

Noise figure

8.0

10.0

dB

Vdet

Detected voltage : at 25GHz @ Pout=20dBm (2)

Detected voltage : at 38GHz @ Pout=20dBm (2)

0.65

0.45

V

V

Id

Bias current (small signal)

330

400

mA

(1)

These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF

ports.

(2)

In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less.

(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.

Absolute Maximum Ratings (1)

Symbol

Parameter

Values

Unit

Vds

Drain bias voltage_small signal (2)

4.0

V

Ids

Drain bias current_small signal

470

mA

Vgs

Gate bias voltage

-2 to +0.4

V

Vdg

Drain Gate voltage (Vds – Vgs)

+5

V

Pin

Maximum continuous input power (2)

Maximum peak input power overdrive

+4 (@ 20GHz)

-1 (@ 40GHz)

+15

dBm

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.