BAT86

SMALL SIGNAL

SCHOTTKY

DIODES

Features

·

For general purpose applications

·

These diodes features very low turn-on voltage and fast switching.

MECHANICAL DATA

·

Case: Do-35 glass case

·

Polarity: Color band denotes cathode end

·

Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

ELECTRICAL CHARACTERISTICS



Dimensions in inches and (millimeters)

































Symbols

Value

Units

Repetitive Peak Reverse Voltage

50

V

Forward Continuous Current at T =25

2001)

mA

3001)

mA

Power Dissipation

Ptot

2001)

mW

Junction temperature

125

0

C

Ambient Operating temperature Range

-55~+125

0

C

Storage Temperature Range

-55~+150

0

C

1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

Reverse breakdown voltage Tested with 10 A pulses

µ

Leakage current V =25V

R

Forward voltage

Pulse Test

at

t

300 s,

2%

I=0.1mA,

at I =1mA,

at I =10mA,

at I =30mA,

at I =100mA

p

F

F

F

F

F

µδ

50

0.5

5

0.460

0.600

8

0.900

0.450

0.380

0.300

Thermal resistance junction to ambient Air

Junction Capacitance at V =1V ,f=1MHz

R

Reverse recovery time Form I =10mA,I =10mA,I =1mA

FR

R

(B

V

V

V

V

V

V

µA

pF

K/W

ns

0.200

0.272

0.365

0.700

0.2

trr

1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)

θ

These devices are protected by a PN junction guard ring against

excessive voltage,such as electrostatic discharges.

·

These diode is also available in the Mini-MELF case with type

designation LL86

·

Metal-on-silicon Schottky barrier device which is protected by a PN

junction guard ring. The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,and low logic applications.

omponents

21201 Itasca Street Chatsworth



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