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EC2612 Datasheet(PDF) 7 Page - United Monolithic Semiconductors |
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EC2612 Datasheet(HTML) 7 Page - United Monolithic Semiconductors |
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7 / 8 page ![]() 40GHz Super Low Noise pHEMT EC2612 Ref. : DSEC26120077 -17-Mar-00 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 (CHIP) Equivalent Circuit model (Drain and Gate bond wires included) Lg Rg Cg d Rd Ld Cds Rd s Ta u G m Cg s Ri Vg s Rs Ls D G S backside of substrate Parameter Unit Value Lg pH 152.54 Rg Ohms 0.13 Cgs fF 142.6 Ri Ohms 3.2 Cgd fF 39.57 Rs Ohms 2.83 Ls pH 0.11 Gm mS 98.14 Tau ps 2.8 Cds fF 46.84 Rds Ohms 116.8 Rd Ohms 2.83 Ld pH 117.01 Typical Noise Parameters at Vds=2V, Ids=14mA (Drain and Gate bond wires included) FREQUENCY NF min ΓΓΓΓopt Rn MHz dB MOD. Ang.(°) 5000 0.26 0.811 19.888 14.089 8000 0.356 0.746 32.28 13.33 12000 0.492 0.658 49.899 11.87 15000 0.595 0.598 64.263 10.51 20000 0.762 0.514 91.037 7.965 24000 0.892 0.473 114.916 5.923 28000 1.01 0.460 139.673 4.16 30000 1.07 0.465 151.723 3.473 32000 1.137 0.475 163.219 2.966 35000 1.223 0.5 179.087 2.63 38000 1.307 0.533 -166.857 2.923 40000 1.362 0.556 -158.467 3.538 42000 1.415 0.581 -150.795 4.536 45000 1.493 0.618 -140.488 6.843 |
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