BFS17_15 datasheet(2/6 Pages) JMNIC

2 / 6 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BFS17

DESCRIPTION

NPN transistor in a plastic SOT23 package.

APPLICATIONS

• A wide range of RF applications such as:

– Mixers and oscillators in TV tuners

– RF communications equipment.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 SOT23.

Marking code: E1p.

handbook, halfpage

MSB003

Top view

QUICK REFERENCED DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note to the Quick reference data and the Limiting values

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

DC collector current

−

Ptot

total power dissipation

up to Ts =70 °C; note 1

−

300

transition frequency

IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj =25 °C1

−

GHz

noise ﬁgure

IC = 2 mA; VCE =5V; RS =50 Ω; f = 500 MHz;

Tj =25 °C

4.5

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

DC collector current

−

ICM

peak collector current

−

Ptot

total power dissipation

up to Ts =70 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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