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MPSA13 Datasheet(PDF) 1 Page - Micro Commercial Components |
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MPSA13 Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 4 page  MPSA13 MPSA14 NPN Silicon Darlington Transistor TO-92 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 C .500 --- 12.7 --- D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 Features • Capable of 1.5Watts of Power Dissipation. • Collector-current 500mA • Collector-base Voltage 30V • Operating and storage junction temperature range: -55 OC to +150OC Maximum Ratings Symbol Rating Rating Unit VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current Continuous 500 mA PD Total Device Dissipation @TA=25 OC Derate above 25 OC 625 5.0 mW mW/ OC PD Total Device Dissipation @TA=25 OC Derate above 25 OC 1.5 12 W mW/ OC TJ Junction Temperature -55 to +150 OC TSTG Storage Temperature -55 to +150 OC Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (IC=100uAdc, IB=0) 30 Vdc ICBO Collector Cutoff Current (VCB=30Vdc, IE=0) 100 nAdc IEBO Emitter Cutoff Current (VEB=10Vdc, IC=0) 100 nAdc ON CHARACTERISTICS(1) hFE(1) DC Current Gain (IC=10mAdc, VCE=5.0Vdc) MPSA13 MPSA14 5000 10000 hFE(2) DC Current Gain (IC=100mAdc, VCE=5.0Vdc) MPSA13 MPSA14 10000 20000 VCE(sat) Collector-Emitter Saturation Voltage (IC=100mAdc, IB=0.1mAdc) 1.5 Vdc VBE(on) Base-Emitter Saturation Voltage (IC=100mAdc, VCE=5.0Vdc) 2.0 Vdc SMALL-SIGNAL CHARACTERISTICS fT Current-Gain – Bandwidth Product (2) (IC=10mAdc, VCE=5.0Vdc, f=100MHz) 125 MHz 1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0% 2. fT=|hfe| x ftest A E B C D G Pin Configuration Bottom View C B E omponents 21201 Itasca Street Chatsworth !"# $% !"# MCC www.mccsemi.com |
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