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MPSA92 Datasheet(PDF) 1 Page - Micro Commercial Components |
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MPSA92 Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 2 page ![]() MPSA92 PNP Silicon High Voltage Transistor TO-92 Features • Through Hole Package Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* -300 Vdc (IC=-1.0mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage -300 Vdc (IC=-100 µAdc, I E=0) V(BR)EBO Emitter -Base Breakdown Voltage -5.0 Vd c (IE=-10 µAdc, I C=0) IEBO Emitt er Cutoff Current -0.25 uA dc (VEB=-3.0Vdc, IC=0) ICBO Collector Cutoff Current -0.25 uAdc (VCB=-200Vdc, IE=0) ON CHARACTERISTICS hFE DC Current Gain* (IC=-1.0mAdc, VCE=-10Vdc) (IC=-10mAdc, VCE=-10Vdc) (IC=-50mAdc, VCE=-10Vdc) 25 80 250 25 VCE(sat) Collector-Emitter Saturation Voltage (IC=-20mAdc, IB=-2.0mAdc) -0.5 Vdc SMALL-SIGNAL CHARACTERISTICS fT Current Gain-Bandwidth Product (IC=-10mAdc, VCE=-5Vdc, f=30MHz) 50 MHz Ccb Coll ec tor -Bas e Capacitance (VCB=-20Vdc, IE=0, f=1 .0MHz) 6.0 pF MAXIMUM RATINGS *Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 C .500 --- 12.7 --- D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 Pin Configuration Bottom View C B E A E B C D G www.mccsemi.com VBE(sat) Base-Emitter Saturation Voltage (IC=-20mAdc, IB=-2.0mAdc) -0.9 Vdc DIMENSIONS Symbol Characteristic Unit MPSA92 Collector – Emitter Voltage VCEO VCBO VEBO IC PD PD RqJA RqJC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Total Device Dissipation @ TC = 25°C Derate above 25 °C Total Device Dissipation @ TA = 25°C Derate above 25 °C Collector Current — Continuous Emitter – Base Voltage Collector – Base Voltage –300 –300 –5.0 –300 200 83.3 625 5.0 1.5 12 Watts mW/ °C mW mW/ °C °C/W °C/W mAdc Vdc Vdc Vdc • Operating & Storage Temperature: -55 °C to +150°C • Marking Code: A92 omponents 21201 Itasca Street Chatsworth !"# $% !"# MCC |
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