Features

• Ideal for printed circuit board

DB Package

• Not ESD Sensitive

Mechanical Data

Pt

Sb l

DB105G

DB106G

Uit

• Reliable low cost construction utilizing molded

plastic technique

Cditi

• Small size, simple installation

Polarity: Polarrity symbols marked on the body

• High surge current capability

Case: Molded plastic

Terminals: Plated terminals, solderable per MIL-STD-

202, Method 208

DB105G thru DB107G

DB107G

Maximum ratings at Tc = 25 °C, unless otherwise specified

Mounting position: Any

Single Phase Glass Passivated

Silicon Bridge Rectifier

Parameter

Symbol

DB105G

DB106G

Unit

Repetitive peak reverse voltage

600

800

V

RMS reverse voltage

420

560

V

DC blocking voltage

600

800

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

DB105G

DB106G

Unit

Maximum average forward

rectified current

1.0

1.0

A

Peak forward surge current

30

30

A

Maximum instantaneous forward

voltage drop

1.1

1.1

55

500

500

Typical junction capacitance

25

25

pF

Typical thermal resistance

R

ΘJC

20

20

°C/W

25

Conditions

1000

Single phase, half sine wave, 60 Hz, resistive or inductive load

For capacitive load derate current by 20%

20

1.0

30

-55 to 150

5

DB107G

1.1

V

Electrical characteristics at Tc = 25 °C, unless otherwise specified

500

Conditions

1000

700

DB107G

-55 to 150

Maximum DC reverse current at

rated DC blocking voltage

μA

www.genesicsemi.com/silicon-products/bridge-rectifiers/

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