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MIC184 Datasheet(PDF) 3 Page - Micrel Semiconductor |
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MIC184 Datasheet(HTML) 3 Page - Micrel Semiconductor |
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3 / 21 page ![]() November 2000 3 MIC184 MIC184 Micrel Absolute Maximum Ratings (Note 1) Power Supply Voltage, V DD ................................................... 6.0V Voltage on Any Pin ................................ –0.3V to V DD+0.3V Current Into Any Pin ................................................... ±6mA Power Dissipation, T A = +125°C ............................... 30mW Junction Temperature ............................................. +150 °C Storage Temperature ............................... –65 °C to +150°C ESD Ratings (Note 3) Human Body Model .................................................. TBD V Machine Model ......................................................... TBD V Soldering Vapor Phase (60 sec.) ............................. +220 °C +5⁄–0°C Infrared (15 sec.) ...................................... +235 °C +5⁄–0°C Operating Ratings (Note 2) Power Supply Voltage, V DD .............................. +2.7V to +5.5V Ambient Temperature Range (T A) ............ -55°C to +125°C Package Thermal Resistance ( θ JA) SOP ................................................................. +152 °C/W MSOP .............................................................. +206 °C/W Electrical Characteristics 2.7V ≤ V DD ≤ 5.5; TA = +25°C, bold values indicate –55°C ≤ TA ≤ +125°C, Note 4; unless noted. Symbol Parameter Condition Min Typ Max Units Power Supply I DD Supply Current INT open, A2, A1, A0 = V DD or GND, 340 TBD µA CLK = DATA = high, normal mode shutdown mode, CLK = 100kHz 2.5 µA INT open, A2, A1, A0 = V DD or GND, 1 TBD µA CLK = DATA = high, shutdown mode t POR Power-On Reset Time V DD > VPOR 15 100 µs V POR Power-On Reset Voltage all registers reset to default values, 2.0 2.7 V A/D conversions initiated V HYST Power-On Reset Hysteresis Voltage 250 mV Temperature-to-Digital Converter Characteristics Accuracy—Local Temperature 0 °C ≤ T A ≤ +100°C, INT open, ±1 ±2 °C Note 5, 6 3V ≤ V DD ≤ 3.6V –55 °C ≤ T A ≤ +125°C, INT open, ±2 ±3 °C 3V ≤ V DD ≤ 3.6V Accuracy—Remote Temperature 0 °C ≤ T D ≤ +100°C, INT open, ±1 ±3 °C Note 5, 6, 7 3V ≤ V DD ≤ 3.6V, 0°C ≤ TA ≤ +85°C –55 °C ≤ T D ≤ +125°C, INT open, ±2 ±5 °C 3V ≤ V DD ≤ 3.6V, 0°C ≤ TA ≤ +85°C t CONV Conversion Time, Note 5 local temperature 100 160 ms remote temperature 200 320 ms Remote Temperature Input (T1) I F Current to External Diode high level 224 400 µA Note 5 low level 7.5 14 µA Address Inputs (A2/T1, A1, A0) V IL Low Input Voltage 2.7V ≤ V DD ≤ 5.5V 0.6 V V IH High Input Voltage 2.7V ≤ V DD ≤ 5.5V 2.0 V C IN Input Capacitance 10 pF I LEAK Input Current ±0.01 ±1 µA I PD Pulldown Current on A2/T1 A2 = V DD, flows for tPOR at power-up 25 µA |
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