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PJS6600 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJS6600 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
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1 / 9 page ![]() PPJS6600 January 22,2015-REV.03 Page 1 30V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 30 / -30V Current 1.6 /-1.1A SOT-23 6L Unit: inch(mm) Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 6L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: SC0 PARAMETER SYMBOL N-Ch LIMIT P-Ch LIMIT UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS +8 +8 V Continuous Drain Current ID 1.6 -1.1 A Pulsed Drain Current (Note 4) IDM 6.4 -4.4 A Power Dissipation Ta=25 oC PD 1.25 W Derate above 25 oC 10 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal resistance - Junction to Ambient (Note 3) RθJA 100 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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