January 1999

3

MIC4423/4424/4425

MIC4423/4424/4425

Micrel

MIC4423/4424/4425 Electrical Characteristics

4.5V

≤ V

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Input

V

IH

Logic 1 Input Voltage

2.4

V

V

IL

Logic 0 Input Voltage

0.8

V

I

IN

Input Current

0V

≤ V

–1

1

µA

–10

10

µA

Output

V

OH

High Output Voltage

V

V

V

OL

Low Output Voltage

0.025

V

R

O

Output Resistance HI State

I

2.8

5

Ω

V

3.7

8

Ω

Output Resistance LO State

I

3.5

5

Ω

V

4.3

8

Ω

I

PK

Peak Output Current

3A

I

Latch-Up Protection

>500

mA

Withstand Reverse Current

Switching Time (Note 4)

t

R

Rise Time

test Figure 1, C

23

35

ns

28

60

ns

t

F

Fall Time

test Figure 1, C

25

35

ns

32

60

ns

t

D1

Delay Tlme

test Ffigure 1, C

33

75

ns

32

100

ns

t

D2

Delay Time

test Figure 1, C

38

75

ns

38

100

ns

Power Supply

I

S

Power Supply Current

V

1.5

2.5

mA

2

3.5

mA

I

S

Power Supply Current

V

0.15

0.25

mA

0.2

0.3

mA

Note 1.

Exceeding the absolute maximum rating may damage the device.

Note 2.

The device is not guaranteed to function outside its operating rating.

Note 3.

Devices are ESD sensitive. Handling precautions recommended. ESD tested to human body model, 1.5k in series with 100pF.

Note 4.

Switching times guaranteed by design.

Supply Voltage ........................................................... +22V

Input Voltage ................................. V

Junction Temperature .............................................. 150

°C

Storage Temperature Range .................... –65

°C to 150°C

Lead Temperature (10 sec.) ..................................... 300

°C

ESD Susceptability, Note 3 ...................................... 1000V

Supply Voltage (V

Temperature Range

C Version .................................................. 0

°C to +70°C

B Version ............................................... –40

°C to +85°C

Package Thermal Resistance

DIP

θ

DIP

θ

Wide-SOIC

θ

Wide-SOIC

θ

SOIC

θ

SOIC

θ