© 1996 Microchip Technology Inc.

DS21052F-page 1

FEATURES

• Single supply with operation down to 1.8V

• Low power CMOS technology

- 1 mA active current typical

- 10

µA standby current typical at 5.5V

-3

µA standby current typical at 1.8V

• Organized as a single block of 128 bytes (128 x 8)

or 256 bytes (256 x 8)

™ compatible

• Schmitt trigger, filtered inputs for noise suppres-

sion

• Output slope control to eliminate ground bounce

• 100 kHz (1.8V) and 400 kHz (5V) compatibility

• Self-timed write cycle (including auto-erase)

• Page-write buffer for up to 8 bytes

• 2 ms typical write cycle time for page-write

• Hardware write protect for entire memory

• Can be operated as a serial ROM

• ESD protection > 3,000V

• 10,000,000 ERASE/WRITE cycles guaranteed on

24AA01

• 1,000,000 ERASE/WRITE cycles guaranteed on

24AA02

• Data retention > 200 years

• 8-pin DIP or SOIC package

• Available for extended temperature ranges

DESCRIPTION

The Microchip Technology Inc. 24AA01 and 24AA02

are 1K bit and 2K bit Electrically Erasable PROMs. The

devices are organized as a single block of 128 x 8-bit or

256 x 8-bit memory with a two wire serial interface.

Low-voltage design permits operation down to 1.8 volts

with standby and active currents of only 3

µA and 1 mA,

respectively. The 24AA01 and 24AA02 also have page-

write capability for up to 8 bytes of data. The 24AA01

and 24AA02 are available in the standard 8-pin DIP and

8-pin surface mount SOIC packages.

- Commercial (C):

0

°C to +70°C

- Industrial (I)

-40

°C to +85°C

PACKAGE TYPES

BLOCK DIAGRAM

A0

A1

A2

1

2

3

4

8

7

6

5

WP

SCL

SDA

A0

A1

A2

1

2

3

4

8

7

6

5

WP

SCL

SDA

PDIP

SOIC

HV GENERATOR

EEPROM

ARRAY

PAGE LATCHES

YDEC

XDEC

SENSE AMP

R/W CONTROL

MEMORY

CONTROL

LOGIC

I/O

CONTROL

LOGIC

WP

SDA

SCL

24AA01/02

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