2SC2073 datasheet(2/3 Pages) UTC

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2SC2073

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R221-021.a



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

150

Collector-Emitter Voltage

VCEO

150

Emitter-Base Voltage

VEBO

5.0

Collector Current

Continuous

1.5

Peak

ICM

3.0

Base Current

0.5

Total Power Dissipation @ TC=25°C

Derate above 25°C

0.2

W/°C

Junction Temperature

-55~+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction-to-Case

θJC

5.0

°C/W



ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

IC=1.0mA, IB=0

150

Collector-Emitter Breakdown Voltage

BVCEO

IC=5.0mA, IB=0

150

Emitter-Base Breakdown Voltage

BVEBO

IB=1.0mA, IC=0

5.0

Collector Cut-Off Current

ICBO

VCB=120V, IE=0

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V, IC=0

μA

ON CHARACTERISTICS (Note 1)

DC Current Gain

hFE

VCE=10V, IC=0.5A

140

Collector-Emitter Saturation Voltage

VCE(SAT) IC=0.5A, IB=50mA

1.5

Base-Emitter On Voltage

VBE(ON)

IC=500mA, VCE=10V

0.65

0.85

DYNAMIC CHARACTERISTICS

Current-Gain -Bandwidth Product

IC=0.5A,VCE=10V, f=1.0MHz

4.0

MHz

Notes: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.

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