BD435

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R221-026.A



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

32

V

Collector-Emitter Voltage

32

V

Collector-Emitter Voltage

32

V

Emitter-Base Voltage

5

V

Collector Current (DC)

4

A

Collector Current (Pulse) (Note 1)

7

A

Base Current

1

A

Pc

36

W

Junction Temperature

150

°C

Storage Temperature

-65 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Sustaining Voltage

32

V

Collector Cut-Off Current

100

µA

Collector Cut-Off Current

100

µA

Emitter Cut-Off Current

1

mA

DC Current Gain (Note 1)

40

130

85

140

50

Collector-Emitter Saturation Voltage (Note 1)

0.2

0.5

V

Base-Emitter ON Voltage (Note 1)

1.1

V

Current Gain Bandwidth Product

3

MHz