© 1996 Microchip Technology Inc.

DS11127G-page 1

FEATURES

• Fast Read Access Time—150 ns

• CMOS Technology for Low Power Dissipation

- 30 mA Active

- 100

µA Standby

• Fast Byte Write Time—200

µs or 1 ms

• Data Retention >200 years

• Automatic Write Operation

- Internal Control Timer

- Auto-Clear Before Write Operation

- On-Chip Address and Data Latches

• Data Polling; Ready/Busy

• Chip Clear Operation

• Enhanced Data Protection

- Pulse Filter

- Write Inhibit

• Electronic Signature for Device Identification

• 5-Volt-Only Operation

• Organized 2Kx8 JEDEC Standard Pinout

- 28 Pin Dual-In-Line Package

- 32-Pin PLCC Package

- 28-Pin Thin Small Outline Package (TSOP)

8x20mm

- 28-Pin Very Small Outline Package (VSOP)

8x13.4mm

• Available for Extended Temperature Ranges:

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

DESCRIPTION

The Microchip Technology Inc. 28C17A is a CMOS 16K non-

volatile electrically Erasable PROM.

The 28C17A

is

accessed like a static RAM for the read or write cycles without

the need of external components. During a “byte write”, the

address and data are latched internally, freeing the micropro-

cessor address and data bus for other operations. Following

the initiation of write cycle, the device will go to a busy state

and automatically clear and write the latched data using an

internal control timer. To determine when the write cycle is

complete, the user has a choice of monitoring the Ready/

Busy output or using Data polling. The Ready/Busy pin is an

open drain output, which allows easy configuration in wired-

or systems. Alternatively, Data polling allows the user to read

the location last written to when the write operation is com-

plete. CMOS design and processing enables this part to be

used in systems where reduced power consumption and reli-

ability are required. A complete family of packages is offered

to provide the utmost flexibility in applications.

PACKAGE TYPES

BLOCK DIAGRAM

• Pin 1 indicator on PLCC on top of package

• 1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

RDY/BSY

NC

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

V

Vcc

WE

NC

A8

A9

NC

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

SS

A6

A5

A4

A3

A2

A1

A0

NC

I/O0

A8

A9

NC

NC

OE

A10

CE

I/O7

I/O6

29

28

27

26

25

24

23

22

21

5

6

7

8

9

10

11

12

13

OE

NC

A9

A8

NC

WE

Vcc

RDY/BSY

NC

A7

A6

A5

A4

A3

A10

CE

I/07

I/06

I/05

I/04

I/03

Vss

I/02

I/01

I/00

A0

A1

A2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

A10

CE

21

20

19

I/O2

14

13

12

OE

NC

A9

A8

22

23

24

RDY/BSY

NC

A7

1

2

3

4

5

25

26

27

28

6

7

NC

WE

A6

A5

A4

A3

I/O7

I/O6

I/O5

I/O4

I/O3

I/O1

I/O0

A0

A1

A2

18

17

16

15

11

10

9

8

I/O0

I/O7

Input/Output

Buffers

Chip Enable/

Output Enable

Control Logic

CE

OE

Data Protection

Circuitry

A10

Y Gating

16K bit

Cell Matrix

X

Decoder

Y

Decoder

A0

Data

Poll

Auto Erase/Write

Timing

WE

L

a

t

c

h

e

s

Program Voltage

Generation

Rdy/

Busy

28C17A

16K (2K x 8) CMOS EEPROM

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