UG9JG-AL5-R datasheet(2/3 Pages) UTC

2 / 3 page

UG9J

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R221-025.a



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

100

Collector Power Dissipation (Total rating)

200

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These characteristics apply to TR1 and TR2.



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

ICBO

VCB=50V, IE=0

100

ICEO

VCE=50V, IB=0

500

Emitter Cut-Off Current

IEBO

VEB=10V, IC=0

0.38

0.71

DC Current Gain

hFE

VCE=5V, IC=10mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=5mA, IB=0.25mA

0.1

0.3

Input Voltage (ON)

VIN(ON)

VCE=0.2V, IC=5mA

1.2

2.4

Input Voltage (OFF)

VIN(OFF)

VCE=5V, IC=0.1mA

1.0

1.5

Transition Frequency

VCE=10V, IE=5mA

250

MHz

Input Resistor

kΩ

Resistor Ratio

R1 / R2

0.9

1.0

1.1

Note: These characteristics apply to TR1 and TR2.

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