22N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-466.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current

22

A

Continuous Drain Current

22

A

Pulsed Drain Current (Note 1)

88

A

Avalanche Energy

Single Pulsed

380

mJ

Repetitive

37

mJ

Peak Diode Recovery dv/dt (Note 2)

dv/dt

18

V/ns

Power Dissipation

370

W

Junction Temperature

150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Repetitive rating; pulse width limited by max. junction temperature.

3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

40

°C /W

Junction to Case

0.30

°C /W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

650

V

Drain-Source Leakage Current

50

µA

Gate- Source Leakage Current

±100

nA

0.30

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

0.3

0.35

Ω

DYNAMIC PARAMETERS

Input Capacitance

3200

pF

Output Capacitance

350

pF

Reverse Transfer Capacitance

36

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

100

ns

Turn-ON Rise Time

250

ns

Turn-OFF Delay Time

650

ns

Turn-OFF Fall-Time

550

ns

Total Gate Charge

(Note 2)

150

nC

Gate Source Charge

45

nC

Gate Drain Charge

76

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

1.5

V

Continuous Source Current (Body Diode)

(Note 1)

22

A

Pulsed Source Current (Body Diode)

88

A

Reverse Recovery Time

di/dt=100A/μs (Note 2)

590

890

ns

Reverse Recovery Charge

7.2

11

µC

Note: 1.

2.

Repetitive rating; pulse width limited by max. junction temperature.

Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.