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UT4957G-S08-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT4957G-S08-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UT4957 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-279.B P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 24mΩ @ VGS=-10V, ID=-7A * RDS(ON) < 36mΩ @ VGS=4.5V, ID=-5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 456 7 8 UT4957G-S08-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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