BSP612P datasheet(2/9 Pages) INFINEON

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BSP612P

OptiMOS™-P Small-Signal-Transistor

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - soldering point (Pin 4)

R thJS

Thermal resistance,

junction - ambient

R thJA

minimal footprint

100

Thermal resistance,

junction - ambient

R thJA

6 cm

2 cooling area1)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250 µA

-60

Gate threshold voltage

V GS(th)

V DS=0 V, I D=-1 mA

-2.0

-1.5

-1.0

Drain-source leakage current

I DSS

V DS=-60V, V GS=0 V,

T j=25 °C

-40

V DS=-60V, V GS=0V,

T j=150 °C

-20

Gate-source leakage current

I GSS

V GS=-20V, V DS=0V

-100

Drain-source on-state resistance

R DS(on)

V GS=-4.5 V, I D=-2.3 A

140

170

V GS=-10 V, I D=-3 A

101

120

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=2.44 A

4.6

Values

1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain

connection. PCB is vertical in still air.

K/W

Rev 2.0

page 2

2015-10-07

BSP612P Datasheet(PDF) 2 Page - Infineon Technologies AG

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