LM2681 datasheet(2/16 Pages) TI

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LM2681

SNVS042B – MARCH 1999 – REVISED MAY 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

V+ to GND Voltage

5.8V

OUT to GND Voltage

11.6V

OUT to V+ Voltage

5.8V

V+ and OUT Continuous Output Current

30 mA

Output Short-Circuit Duration to GND(3)

1 sec.

Continuous Power Dissipation (TA = 25°C)

(4)

600 mW

TJMax

(4)

150°C

θJA

(4)

210°C/W

Operating Junction Temperature Range

−40° to 85°C

Storage Temperature Range

−65°C to +150°C

Lead Temp. (Soldering, 10 seconds)

300°C

ESD Rating

2kV

(1)

Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when

operating the device beyond its rated operating conditions.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be

avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.

(4)

The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/θJA, where TJMax is the maximum junction

temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package.

Electrical Characteristics

Limits in standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range.

Unless otherwise specified: V+ = 5V, C1 = C2 = 3.3 μF.

(1)

Symbol

Parameter

Condition

Min

Typ

Max

Units

V+

Supply Voltage

2.5

5.5

Supply Current

No Load

550

1000

µA

Output Current

RSW

Sum of the Rds(on)of the four internal

IL = 20 mA

MOSFET switches

ROUT

Output Resistance(2)

IL = 20 mA

fOSC

Oscillator Frequency

See(3)

160

kHz

fSW

Switching Frequency

See(3)

kHz

PEFF

Power Efficiency

RL (1.0k) between GND and OUT

IL = 20 mA to GND

VOEFF

Voltage Conversion Efficiency

No Load

99.96

(1)

In the test circuit, capacitors C1 and C2 are 3.3 µF, 0.3Ω maximum ESR capacitors. Capacitors with higher ESR will increase output

resistance, reduce output voltage and efficiency.

(2)

Specified output resistance includes internal switch resistance and capacitor ESR. See POSITIVE VOLTAGE DOUBLER

(3)

The output switches operate at one half of the oscillator frequency, fOSC = 2fSW.

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