3N65KG-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

3N65K-MK4

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R205-045.a



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

3.0

Continuous Drain Current

3.0

Pulsed Drain Current (Note 2)

IDM

Avalanche Energy

Single Pulsed (Note 3)

EAS

130

Repetitive (Note 2)

EAR

7.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

Derate above 25°C

0.4

W/°C

Junction Temperature

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ.

3. L=28mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD ≤ 3.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

110

°С/W

Junction to Case

θJC

2.5

°С/W

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