3N50K-MK

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-036.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Drain Current

3 (Note 5)

A

Pulsed (Note 2)

12 (Note 5)

A

Avalanche Current (Note 2)

3

A

Avalanche Energy

Single Pulsed (Note 3)

150

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

75

W

TO-220F/TO-220F1

TO-220F3

25

W

TO-220F2

26

W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

50

W

Derate above 25°C

TO-220

0.5

W/°C

TO-220F/TO-220F1

TO-220F3

0.2

W/°C

TO-220F2

0.208

W/°C

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

0.4

W/°C

Power Dissipation

36

W

Derate above 25°C

0.288

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. Drain current limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

110

Junction to Case

TO-220

1.67

°C/W

TO-220F/TO-220F1

TO-220F3

4.9

TO-220F2

4.8

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

2.5