5N40KG-TN3-R datasheet(4/7 Pages) UTC

4 / 7 page

5N40K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-050.A



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

400

Breakdown Voltage Temperature

Coefficient

△

BVDSS △

/TJ Reference to 25°C, ID=250µA

0.4

V/°C

Drain-Source Leakage Current

IDSS

VDS=400V, VGS=0V

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100 nA

Reverse

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2.5A

0.65 1.2

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

710 910

Output Capacitance

COSS

118

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VDD = 30V, ID = 0.5A, RG = 25Ω

(Note 1, 2)

Rise Time

100

Turn-OFF Delay Time

tD(OFF)

135 110

Fall-Time

105

Total Gate Charge

VDS= 50V, ID= 1.3A, VGS= 10 V

(Note 1, 2)

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=5A, VGS=0V

1.4

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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