UT7317

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-141.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

Continuous Drain Current (Note 3)

6

A

Pulsed Drain Current (Note 3)

24

Power Dissipation

2.5

W

Maximum Junction Temperature

150

°C

Storage Temperature Range

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note3)

50

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

uA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.5

2

V

Drain-Source On-State Resistance (Note2)

21

28

mΩ

27

42

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

1200

pF

Output Capacitance

210

pF

Reverse Transfer Capacitance

95

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

11

22

ns

Turn-ON Rise Time

17

33

ns

Turn-OFF Delay Time

37

68

ns

Turn-OFF Fall Time

20

38

ns

Total Gate Charge (Note2)

30

36

nC

Gate-Source Charge

5.8

nC

Gate-Drain Charge

3.8

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

0.7

1.3

V

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface Mounted on 1in