UTT2N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-B19.b



PARAMETER

SYMBOL

RATINGS

UNIT

Gate-Source Voltage

±20

V

Drain-Source Voltage

100

V

Drain Current

1

A

Pulsed

4.3

A

Power Dissipation

0.87

W

Derating

6.94

mW/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note)

55

°C/W

Junction to Case

12

°C/W

reference is defined as the solder mounting surface of the drain pins.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

0.5

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance(Note 1)

0.7

Ω

1.0

Ω

DYNAMIC PARAMETERS

Input Capacitance (Note 3)

220

pF

Output Capacitance (Note 3)

33

pF

Reverse Transfer Capacitance (Note 3)

17

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 3)

21

nC

Gate to Source Charge (Note 3)

2

nC

Gate to Drain Charge (Note 3)

1.5

nC

Turn-ON Delay Time (Note 2, 3)

25.6

ns

Rise Time (Note 2, 3)

16

ns

Turn-OFF Delay Time (Note 2, 3)

55

ns

Fall-Time (Note 2, 3)

13

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

1

A

Maximum Body-Diode Pulsed Current

4.3

A

Drain-Source Diode Forward Voltage (Note 1)

0.95

V

Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

2. Switching characteristics are independent of operating junction temperature

3. For design aid only, not subject to production testing