BCV49 datasheet(2/7 Pages) INFINEON

2 / 7 page

2011-10-05

BCV29, BCV49

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

≤ 20

K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics

at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCV29

IC = 10 mA, IB = 0 , BCV49

V(BR)CEO

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BCV29

IC = 100 µA, IE = 0 , BCV49

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector-base cutoff current

VCB = 30 V, IE = 0 , BCV29

VCB = 60 V, IE = 0 , BCV49

VCB = 30 V, IE = 0 , TA = 150 °C, BCV29

VCB = 60 V, IE = 0 , TA = 150 °C, BCV49

ICBO

0.1

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain1)

IC = 100 µA, VCE = 1 V, BCV29

IC = 100 µA, VCE = 1 V, BCV49

IC = 10 mA, VCE = 5 V, BCV29

IC = 10 mA, VCE = 5 V, BCV49

IC = 100 mA, VCE = 5 V, BCV29

IC = 100 mA, VCE = 5 V, BCV49

IC = 0.5 A, VCE = 5 V, BCV29

IC = 0.5 A, VCE = 5 V, BCV49

hFE

4000

2000

10000

4000

20000

10000

4000

2000

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VCEsat

Base emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VBEsat

1.5

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