Vishay Siliconix

SiS412DN

New Product

Document Number: 69006

S09-0135-Rev. C, 02-Feb-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

•

APPLICATIONS

- System Power

- Load Switch

PRODUCT SUMMARY

a

30

12

3.8 nC

12

N-Channel MOSFET

G

D

S

Ordering Information: SiS412DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

3.30 mm

3.30 mm

PowerPAK 1212-8

Bottom View

Notes:

a. Package Limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 81 °C/W.

e. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

± 20

A

Pulsed Drain Current

30

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

L = 0.1 mH

5

Single Pulse Avalanche Energy

1.25

mJ

Maximum Power Dissipation

15.6

W

10

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 10 s

32

39

°C/W

Maximum Junction-to-Case (Drain)

Steady State

6.5

8