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MSASC75W100F Datasheet(PDF) 2 Page - Microsemi Corporation

Part # MSASC75W100F
Description  LOW REVERSE LEAKAGE SCHOTTKY DIODE
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MSASC75W100F Datasheet(HTML) 2 Page - Microsemi Corporation

  MSASC75W100F Datasheet HTML 1Page - Microsemi Corporation MSASC75W100F Datasheet HTML 2Page - Microsemi Corporation  
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DESCRIPTION
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
Reverse (Leakage)
IR25
VR= 100 Vdc, Tc= 25
°C
10
500
uA
IR125-1
VR= 24 Vdc, Tc= 125
°C
1.25
-
mA
Current
IR125-2
VR= 80 Vdc, Tc= 125
°C
2.5
-
mA
IR125
VR= 100 Vdc, Tc= 125
°C
4
50
mA
Forward Voltage
VF1
IF= 2 A, Tc= 25
°C
450
-
mV
pulse test,
VF2
IF= 10 A, Tc= 25
°C
590
650
mV
pw= 300
µs
VF3
IF= 25 A, Tc= 25
°C
710
780
mV
d/c
≤2%
VF4
IF= 50 A, Tc= 25
°C
790
-
mV
VF5
IF= 75 A, Tc= 25
°C
840
920
mV
VF6
IF= 100 A, Tc= 25
°C
875
-
mV
VF7
IF= 2 A, Tc= -55
°C
555
-
mV
VF8
IF= 10 A, Tc= -55
°C
645
710
MV
VF9
IF= 25 A, Tc= -55
°C
760
840
MV
VF10
IF= 50 A, Tc= -55
°C
900
-
MV
VF11
IF= 75 A, Tc= -55
°C
1020
1100
mV
VF12
IF= 2 A, Tc= 125
°C
340
-
MV
VF13
IF= 10 A, Tc= 125
°C
495
550
MV
VF14
IF= 25 A, Tc= 125
°C
585
660
MV
VF15
IF= 50 A, Tc= 125
°C
655
-
MV
VF16
IF= 75 A, Tc= 125
°C
700
780
mV
VFa
IF= 100 mA, Tc= 25
°C
350
-
mV
VFb
IF= 100 mA, Tc= 125
°C
200
-
mV
VFc
IF= 100 mA, Tc= -55
°C
480
-
mV
Junction Capacitance
Cj1
VR= 10 Vdc
1100
-
pF
Cj2
VR= 5 Vdc
1400
1600
pF
Breakdown Voltage
BVR
IR= 5 mA, Tc= 25
°C
115
V
IR= 5 mA, Tc= -55
°C
100
110
V
Electrical Parameters
1N6820 (MSASC75W100F)
1N6820R (MSASC75W100FR)
0.000
0.200
0.400
0.600
0.800
1.000
1.200
1
10
100
1000
IF(A)
-55C
+25C
+125C



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