2N2857 datasheet(1/4 Pages) MICROSEMI

Part #	2N2857

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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1 / 4 page

MSC1066.PDF 3-10-99

2N2857

DESCRIPTION:

Silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer

applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

15

Vdc

VCBO

Collector-Base Voltage

30

Vdc

VEBO

Emitter-Base Voltage

2.5

Vdc

IC

Collector Current

40

mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

200

1.14

mWatts

mW/ ºC

1

2

3

4

1. Emitter

2. Base

3. Collector

4. Case

TO-72

Features

• Silicon NPN, To-72 packaged UHF Transistor

• 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC

• Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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