MSC0950A.DOC 11-09-98

2N2880

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

SYMBOL

CHARACTERISTIC

VALUE

UNITS

Collector-Base Voltage

110

V

Collector-Emitter Voltage

80

V

Emitter-Base Voltage

8

V

Continuous Collector Current

5

A

Continuous Base Current

0.5

A

Storage Temperature

-65 to 200

Operating Junction Temperature

-65 to 200

*

Lead Temperature 1/16"

From Case for 10 Sec.

230

Power Dissipation

2

30

W

W

Thermal Resistance

Junction to Case

3.33

5 Amp, 80V,

Planar, NPN

Power Transistors

JAN,JTX,JANTXV,JANS

FEATURES:

•

High Reliability

•

Greater Gain Stability

TO-59

APPLICATIONS:

•

Fast Switching

•

High Frequency Switching and Amplifying

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200

the hermetically sealed package insures maximum reliability

and long life.

*

Indicates MIL-S-19500/315