MSC1057.PDF 05-19-99

2N3585

ABSOLUTE MAXIMUM RATINGS:

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

Collector-Base Voltage

500

Volts

Collector-Emitter Voltage

300

Volts

Ω

400

Volts

Emitter-Base Voltage

6

Volts

Peak Collector Current

5

Amps

Continuous Collector Current

2

Amps

Base Current

1

Amps

Storage Temperature

-65 to 200

Operating Junction Temperature

-65 to 200

*

Lead Temperature 1/16" from Case for 10 Sec.

235

Power Dissipation

Thermal Impedance

35

5.0

Watts

5 Amp, 500V,

High Voltage

NPN Silicon Power

Transistors

TO-66

APPLICATIONS:

•

Off-Line Inverters

•

Deflection Circuits

•

Switching Regulators

•

DC-DC Converters

•

Motor Controls

•

High Voltage Amplifiers

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200

the hermetically sealed package insures maximum reliability

and long life.

*

Indicates JEDEC registered data.

FEATURES:

•

High Voltage: 250 to 500V

•

High Current: 2 Amps

•

•

•

High Power: 35 Watts