2N3720 datasheet(1/3 Pages) MICROSEMI

Part #	2N3720

Description	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

Logo

1 / 3 page

MSC1027.PDF 02-24-99

2N3720

ABSOLUTE MAXI

ABSOLUTE MAXIMUM RATINGS:

MUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

VCEO*

Collector-Emitter Voltage

60

Vdc

VCB*

Collector-Base Voltage

60

Vdc

VEB*

Emitter-Base Voltage

4.0

Vdc

IC*

Peak Collector Current

10

Adc

IC*

Continuous Collector Current

3.0

Adc

IB*

Base Current

0.5

Adc

TSTG*

Storage Temperature

-65 to 200

°°C

TJ*

Operating Junction Temperature

-65 to 200

°°C

PD*

Total Device Dissipation

TC = 25°°C

Derate above 25

°°C

6.0

34.3

Watts

mW/

°°C

PD*

θθ JC

Total Device Dissipation

TA = 25°°C

Derate above 25

°°C

Thermal Resistance

Junction to Case

Junction to Ambient

1.0

5.71

29

175

Watts

mW/

°°C

°°C/W

Silicon PNP

Power Transistors

FEATURES:

•

Collector-Emitter Sustaining Voltage:

VCEO(SUS) = 60 Vdc (Min) - 2N3720

•

DC Current Gain:

hFE = 25-180 @ IC = 1.0 Adc

•

Low Collector-Emitter Saturation Voltage:

VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc

•

High Current-Gain - Bandwidth Product:

fT = 90 MHz (Typ)

TO-5

APPLICATIONS:

•

High-Speed Switching

•

Medium-Current Switching

•

High-Frequency Amplifiers

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE DIFFUSED

PLANAR process. This technology produces high voltage devices with

excellent switching speeds, frequency response, gain linearity, saturation

voltages, high current gain, and safe operating areas. They are intended for

use in Commercial, Industrial, and Military power switching, amplifier, and

regulator applications.

Ultrasonically bonded leads and controlled die mount techniques are utilized

to further increase the SOA capability and inherent reliability of these

devices. The temperature range to 200

°°C permits reliable operation in high

ambients, and the hermetically sealed package insures maximum reliability

and long life.

*

Indicates JEDEC registered Data.

Similar Part No. - 2N3720

Manufacturer	Part #	Datasheet	Description
Central Semiconductor C...	2N3720	22Kb / 1P	Small Signal Transistors
Seme LAB	2N3720	27Kb / 2P	PNP SILICON TRANSISTOR
New Jersey Semi-Conduct...	2N3720	153Kb / 1P	POWER TRANSISTORS PNP SILICON

More results

Similar Description - 2N3720

Manufacturer	Part #	Datasheet	Description
Bourns Electronic Solut...	BD244	106Kb / 5P	PNP SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BD544	103Kb / 5P	PNP SILICON POWER TRANSISTORS
List of Unclassifed Man...	2SA1659	48Kb / 3P	Silicon PNP Power Transistors
Inchange Semiconductor ...	2SA1129	95Kb / 3P	Silicon PNP Power Transistors
	2SA1067	152Kb / 3P	Silicon PNP Power Transistors
	2SA1094	181Kb / 3P	Silicon PNP Power Transistors
	2SA636	149Kb / 3P	Silicon PNP Power Transistors
	2SA1859	146Kb / 4P	Silicon PNP Power Transistors
	2SA648	152Kb / 3P	Silicon PNP Power Transistors
	2SA971	155Kb / 3P	Silicon PNP Power Transistors

More results

2N3720 Datasheet(PDF) 1 Page - Microsemi Corporation

2N3720 Datasheet(HTML) 1 Page - Microsemi Corporation

Similar Part No. - 2N3720

Similar Description - 2N3720

Html Pages

1 2 3

Datasheet Download

Link URL