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2N5031 Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N5031 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page ![]() MSC1303.PDF 10-25-99 2N5031 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 10 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) 15 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) 3.0 - - Vdc ICBO Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) - 1.0 10 nA (on) HFE DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) 25 - 300 - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit fT Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 1200 - 2500 MHz CCB Output Capacitance (IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz) - 2.5 - dB |
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