BFY90 datasheet(1/4 Pages) MICROSEMI

Part #	BFY90

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

PDF	4 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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MSC1310.PDF 10-25-99

BFY90

DESCRIPTION:

Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer

applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

15

Vdc

VCBO

Collector-Base Voltage

30

Vdc

VEBO

Emitter-Base Voltage

2.5

Vdc

IC

Collector Current

50

mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

200

1.14

mWatts

mW/ ºC

1

2

3

4

1. Emitter

2. Base

3. Collector

4. Case

TO-72

Features

• Silicon NPN, To-72 packaged VHF/UHF Transistor

• Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA,

• 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC

• Power Gain, G

PE = 19 dB (typ) @ 200 MHz

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

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