ADP3207 datasheet(5/29 Pages) ONSEMI

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ADP3207

Rev. 1 | Page 5 of 29 | www.onsemi.com

Parameter

Symbol

Conditions

Min

Typ

Max

Units

POWER-GOOD COMPARATOR

Undervoltage Threshold

VCSREF(UV)

Relative to nominal DAC voltage

−240

−300

−360

Overvoltage Threshold

VCSREF(OV)

Relative to nominal DAC voltage

150

200

250

Output Low Voltage

VPWRGD(L)

IPWRGD(SINK) = 4 mA

250

Output Leakage Current

IPWRGD

VPWRDG = 5 V

μA

Power-Good Delay Timer

PGDELAY Threshold

VPGDELAY(TH)

2.9

PGDELAY Charge Current

IPGDELAY

VPGDELAY = 2.0 V

1.9

μA

PGDELAY Discharge Resistance

RPGDELAY

VPGDELAY = 0.2 V

550

Power-Good Masking Time

130

μs

Crowbar Threshold Voltage

VCSREF(CB)

Relative to FBRTN

1.65

1.7

1.75

Reverse Voltage Detection

Threshold

VCSREF(RV)

Relative to FBRTN

CSREF is falling

−300

−350

CSREF is rising

−75

−10

CLKEN OUTPUT

Output Low Voltage

CLKEN

(SINK)

= 4 mA

400

Output Leakage Current

CLKEN

= 5 V, VSS = GND

μA

OD/DCM OUTPUTS

Output Low Voltage

VOL

ISINK = 400 μA

500

Output High Voltage

VOH

ISOURCE = 400 μA

PWM OUTPUTS

Output Low Voltage

VOL(PWM)

IPWM(SINK) = 400 μA

500

Output High Voltage

VOH(PWM)

IPWM(SOURCE) = 400 μA

4.0

SUPPLY

Supply Voltage Range

VCC

4.5

5.5

Supply Current

Normal mode

4.2

EN = 0 V

190

300

μA

VCCOK Threshold Voltage

VCCOK

VCC is rising

4.4

4.5

VCC UVLO Threshold Voltage

VCCUVLO

VCC is falling

4.0

4.15

VCC Hysteresis2

260

1 All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC).

2 Guaranteed by design or bench characterization, not production tested.

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