DESCRIPTION

The GC4400 series are high voltage, high power (cath-

ode base) PIN diodes. These high resistivity silicon de-

vices are passivated with silicon dioxide for high stability

and reliability and have been proven by thousands of de-

vice hours in high reliability systems.

Each device can withstand storage temperatures from

-65° to +200°C and will operate over the range from -55°

to +150°C. All devices meet or exceed military environ-

mental specifications of MIL-S-19500.

The GC4400 series will operate typically with +50 mA

forward bias. Breakdown voltages are available up to

1000 volts.

MODEL

NUMBER

BREAKDOWN VOLTAGE

JUNCTION

(pF)

(100mA, 100 MHz)

(Ohms)

CARRIER LIFETIME

(µsec)

THERMAL RESISTANCE

(MAX)

(°C/W)

GC4410

100

0.10

0.6

.2

40

GC4411

100

0.25

0.5

.5

25

GC4412

100

0.50

0.4

.7

20

100

0.75

0.3

1.0

10

GC4430

300

0.10

1.5

.5

40

GC4431

300

0.25

1.2

1.0

30

GC4432

300

0.50

1.0

1.5

20

300

0.75

0.8

2.0

10

GC4490

1000

0.10

1.5

1.0

30

GC4491

1000

0.25

1.2

2.0

25

GC4492

1000

0.50

1.0

3.0

20

1000

0.75

0.8

5.0

10

GC4494

1000

1.3

.35

6.0

7

GC4495

1000

2.5

.3

7.5

5

APPLICATIONS

The GC4400 series can be used in RF circuits as an on/off

element, as a switch, or as a current controlled resistor in

attenuators extending over the frequency range from

UHF through Ku band.

Switch applications include high speed switches (ECM

systems), TR or lobing switches, channel or antenna se-

lection switches (telecommunications), duplexers (ra-

dar) and digital phase shifters (phased arrays).

The GC4400 series can be used in RF circuits as an on/off

at moderate RF power levels.

Attenuator type applications include amplitude modulators,

AGC attenuators, power levelers and level set attenuators.

HIGH VOLTAGE PIN DIODES

RATINGS

Maximum Leakage Current: 0.5µA at 80% of minimum

rated breakdown

Operating Temperature:

-55°C to +150°C

Storage Temperature:

-65°C to +200°C

The tabulated specifications above are for case style 30.

Diodes are also available in various chip configurations.

Each type offers trade offs in series resistance, junction

capacitance, carrier lifetime and breakdown voltage; the

proper choice of which depends on the end application.

Reverse polarity diodes (NIP) and faster speed PIN and

NIP diodes are also available. (See data sheets for

GC4500, GC4200, and GC4300 series respectively.)

Notes:

1. Capacitance is measured at 1 MHz and -50 volts.

2. Resistance is measured using transmission loss techniques.

3. These devices are not available in all case styles. Please consult the factory. specific package styles offered.

SEMICONDUCTOR OPERATION

75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748

75

Control Devices

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