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LX5510 Datasheet(PDF) 2 Page - Microsemi Corporation |
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LX5510 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 7 page ![]() LX5510 PRELIMINARY DATA SHEET C C O O N N F F II D D E E N N T T II A A L L Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 Copyright 2003 Rev. 0.3g, 2003-05-08 InGaP HBT 2.4 – 2.5 GHz Power Amplifier I N T E GR A T ED PRODUCT S ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Maximum Junction Temperature (TJ max) .................................................. 150°C Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-60°C to +150°C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal . x denotes respective pin designator 1, 2, or 3 PACKAGE PIN OUT RF IN RF IN RF OUT RF OUT VC2 * 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 * Pad is Ground GND GND GND LQ PACKAGE (Bottom View) FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 Bias current control voltage for the first stage. VB2 Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge. VCC Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF OUT RF output for the power amplifier. VC1 Power supply for first stage amplifier. The VC1 feedline should be terminated with a 4pF bypass capacitor 50mil apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc). VC2 Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2nH AC blocking inductor and 1uF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as Vc). GND The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. |
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