MSC1315.PDF 10-25-99

MRF545

DESCRIPTION:

Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other

applications requiring high breakdown characteristics.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

70

Vdc

Collector-Base Voltage

100

Vdc

Emitter-Base Voltage

3.0

Vdc

Collector Current

400

mA

Thermal Data

P

D

Derate above 25ºC

3.5

20

Watts

mW/ ºC

Tstg

Storage Temperature Range

-65 to +200

ºC

1. Emitter

2. Base

3. Collector

TO-39

Features

• Silicon PNP, high Frequency, high breakdown, To-39 packaged,

Transistor

• Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz

• High Collector Base Breakdown Voltage - BVCBO = 100 V (min)

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855