MRF559 datasheet(3/5 Pages) MICROSEMI

Part #	MRF559

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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3 / 5 page

MSC1317.PDF 10-25-99

MRF559

FUNCTIONAL

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

GPE

Power Gain

Test Circuit-Figure 1

Pout = 0.5 W, VCE =12.5Vdc

f = 870

MHz

f = 512

MHz

8.0

9.5

Collector Efficiency

Test Circuit-Figure 1

Pout = 0.5 W, VCE =12.5Vdc

f = 870

MHz

f = 512

MHz

Typical Performance @ VCC = 7.5V

GPE

Power Gain

Test Circuit-Figure 1

Pout = 0.5 W, VCE =7.5Vdc

f = 870 MHz

f = 512

MHz

6.5

Collector Efficiency

Test Circuit-Figure 1

Pout = 0.5 W, VCE =7.5Vdc

f = 870 MHz

f = 512

MHz

Figure 2. 870 MHz Test Fixture

C1, C2, C4, C5 — 1.0–10 pF Johanson

C3, C6 — 0.001

µF Chip Capacitor

C7 — 1.0

µF Tantalum

L1, L4 — 4 Turns #26 AWG, 0.3 cm ID, 0.4 cm Long

L2, L3 — Ferrite Bead

Z1 — 50

Ω 1.5 cm

Z2 — 30

Ω 2.5 cm

Z3 — 50

Ω 2.0 cm

Z4 — 50

Ω 1.2 cm

Z5, Z6 — 50

Ω 1.25 cm

Microstrip Elements —

ε r = 2.55

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