MRF586 datasheet(1/4 Pages) MICROSEMI

Part #	MRF586

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

PDF	4 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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MSC1320.PDF 10-25-99

MRF586

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter

20

Vdc

VCBO

Collector-Base Voltage

35

Vdc

VEBO

Emitter-Base Voltage

3.0

Vdc

IC

Collector Current

200

mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

1.0

5.71

Watts

mW/ ºC

1. Emitter

2. Base

3. Collector

TO-39

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,

•

G

U max

= 12.5dB (typ) @ 300 MHz, 15v, 40mA

• |S

21|

2 = 12.5dB (typ) @ 300 MHz, 15v, 40mA

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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