MSC0943.PDF 10-28-98

MS1226

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

DESCRIPTION:

DESCRIPTION:

The MS1226 is a 28V epitaxial silicon NPN planar transistor

designed primarily for SSB communications. This device

utilizes emitter ballasting for improved ruggedness and

reliability.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Collector-base Voltage

65

V

Collector-emitter Voltage

36

V

Emitter-Base Voltage

4.0

V

Device Current

4.5

A

Power Dissipation

80

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

2.2

°°C/W

Features

Features

• 30 MHz

• 28 VOLTS

• IMD = -28 dB

• P

• G

• COMMON EMITTER CONFIGURATION