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MS2215 Datasheet(PDF) 1 Page - Microsemi Corporation |
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MS2215 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page ![]() MSC0921.PDF 9-23-98 MS2215 DESCRIPTION: DESCRIPTION: The MS2215 is designed for specialized avionics applications, including Mode-S, TCAS and JTIDS where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit PDISS Power Dissipation * (TC ≤≤ °C) 300 IC Device Current * 16.5 A VCC Collector - Supply Voltage * 35 V TJ Junction Temperature (Pulsed RF Operation) 250 °°C TSTG Storage Temperature * - 65 to + 200 °°C Thermal Data Thermal Data RTH(j-c) Junction-Case Thermal Resistance * 0.57 °°C/W * Applies only to rated RF amplifier operation Features •• REFRACTORY/GOLD METALLIZATION •• EMITTER SITE BALLASTED •• LOW THERMAL RESISTANCE •• INPUT/OUTPUT MATCHING •• OVERLAY GEOMETRY •• METAL/CERAMIC HERMETIC PACKAGE •• P OUT = 150 W MIN. WITH 7.5 dB Gain RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
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