MSC0937A.DOC 10-20-98

MS2475

DESCRIPTION:

DESCRIPTION:

The MS2475 is a silicon NPN power transistor designed for IFF

applications. The MS2475 is designed to exceed the high peak

power requirements of today's IFF systems. Hermetic sealing,

gold metalization and internal input matching provide superior

long term reliability and broadband performance.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Supply Voltage*

55

V

Device Current*

≤≤ 100°°C)

45

A

Power Dissipation*

1670

W

Junction Temperature

+200

°°C

Storage Temperature

- 65 to + 200

°°C

Thermal Data

Thermal Data

Junction-Case Thermal Resistance*

0.06

°°C/W

* Applies only to rated RF operation.

Features

• DESIGNED FOR HIGH POWER PULSED IFF

• 720 WATTS (min.) IFF 1030 or 1090 MHz

• REFRACTORY GOLD METALLIZATION

• 6.8 dB MIN. GAIN

• LOW THERMAL RESISTANCE FOR RELIABILTY AND

RUGGEDNESS

• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED

OPERATING CONDITIONS

• INPUT MATCHED, COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855