Document Number: 88941

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Revision: 23-Oct-09

1

High-Voltage Trench MOS Barrier Schottky Rectifier

V30100S, VF30100S, VB30100S, VI30100S

Vishay General Semiconductor

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per JESD

22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA

package)

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB, ITO-220AB, TO-263AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity:

As marked

Mounting Torque:

10 in-lbs maximum

PRIMARY CHARACTERISTICS

30 A

100 V

250 A

0.69 V

150 °C

V30100S

VF30100S

VI30100S

VB30100S

TO-220AB

TO-263AB

TO-262AA

TMBS

®

ITO-220AB

2

1

3

PIN 1

PIN 2

PIN 3

K

1

K

2

3

NC

A

K

HEATSINK

NC

A

K

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

1

2

3

PARAMETER

SYMBOL

V30100S

VF30100S

VB30100S

VI30100S

UNIT

Maximum repetitive peak reverse voltage

100

V

Maximum average forward rectified current (fig. 1)

30

A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

250

A

230

mJ

Peak repetitive reverse current

1.0

A

dV/dt

10 000

V/μs

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

1500

V

Operating junction and storage temperature range

- 40 to + 150

°C