2SD1620

No.1719-2/6

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Dissipation

PC

500

mW

1.3

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=20V, IE=0A

100

nA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

100

nA

DC Current Gain

hFE

VCE=2V, IC=3A

140

210

Gain-Bandwidth Product

fT

VCE=10V, IC=50mA

200

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

30

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=3A, IB=60mA

0.3

0.4

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

30

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEX

IC=1mA, VBE=3V

20

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

10

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

6

V

Ordering Information

Device

Package

Shipping

memo

2SD1620-TD-E

PCP

1,000pcs./reel

Pb Free

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

5

4

3

2

1

0

0123

5

46

ITR09988

1mA

5mA

2mA

10mA

15mA

25mA

5

4

3

2

1

0

0

0.2

0.4

0.6

1.0

0.8

1.2

ITR09987

IB=0mA

2mA

5mA

10mA

15mA

25mA

40mA

60mA

IB=0mA

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.