2SD1835

No.2158-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=50V, IE=0A

100

nA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

100

nA

DC Current Gain

hFE1VCE=2V, IC=100mA

100*

560*

hFE2VCE=2V, IC=1.5A

40

Gain-Bandwidth Product

fT

VCE=10V, IC=50mA

150

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

12

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1A, IB=50mA

0.15

0.4

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=50mA

0.9

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

60

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

6

V

Turn-ON Time

ton

See specified Test Circuit.

60

ns

Storage Time

tstg

550

ns

Fall Time

tf

30

ns

* : The 2SD1835 is classified by 100mA hFE as follows :

Rank

R

S

T

U

hFE

100 to 200

140 to 280

200 to 400

280 to 560

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SD1835S

NP

500pcs./bag

Pb Free

2SD1835T

NP

500pcs./bag

2SD1835S-AA

NP

1,500pcs./box

2SD1835T-AA

NP

1,500pcs./box

VR

RB

VCC

VBE= --5V

+

+

50Ω

INPUT

OUTPUT

RL

100μF

470μF

IB1

IB2

IC=10IB1= --10IB2=500mA, VCC=25V

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

ITR09361

0

0.4

0.8

1.2

1.6

2.0

2.4

0

0.4

0.8

1.2

1.6

2.0

2.4

IB=0mA

50mA

25mA

40mA

15mA

8mA

ITR09363

04

28

612

10

0

200

400

600

800

1000

1200

IB=0mA

7mA

5mA

4mA

3mA

2mA

1mA

6mA

4mA

2mA