Microsemi

Opto Electronics Products Group

2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256

http://www.microsemi.com/opto

Page 1

Copyright

 2000

MSC1592.PDF 2000-10-16

MXP3000 Series

GaAs PIN Photodiode Chips

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

Microsemi’s GaAs PIN

Photodiode chips are ideal for wide

bandwidth 850nm optical

networking applications.

The five devices offered feature

excellent dark current ratings of 1-3

nA, and a breakdown voltage of 20

Volts with the bandwidth options for

1.4 GHz (active area of 250 mm

1.75 GHz(active area of 200 mm

GHz (active area of 100 mm

(active area of 60 mm

GHz (active area of 30 mm

The MXP3000 series of

photodiodes are originally offered in

die form for manufacturers of

photodiode modules, supervisory

pump laser circuits, and combination

PIN Photodiode-transimpedance

amplifier hybrids.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

!"Low Dark Current

!"Extremely low capacitance

!"Wide bandwidth

!"Fast response time

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

!"850nm Fiber Optic

Applications

Part Ratings and Characteristics

Item

Sym

MXP3001

MXP3002

MXP3003

MXP3004

MXP3005

Unit

Test Condition

Active Area(Dia.)

—

30

60

100

200

250

mm2

—

Photo Sensitive Area

0.0007

0.0028

0.0078

0.0314

0.0491

mm2

Detection Range

—

850

850

850

850

850

Nm

—

Responsivity

R

0.45

0.45

0.45

0.45

0.45

A/W

Dark Current

1

1

1

2

3

nA

Capacitance

C

0.3

0.4

0.6

1.5

2

pF

Rise/Fall Time

40

50

70

200

250

ps

Bandwidth

8.75

7

5

1.75

1.4

GHz

Breakdown Voltage

VB

20

20

20

20

20

Chip Size

350 x 350

350 x 350

350 x 350

500 x 500

500 x 500

um x um

Bonding Pad Size

40 x 100

40 x 100

100

100

100

um x um