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SD1429 Datasheet(PDF) 1 Page - Microsemi Corporation |
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SD1429 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 4 page ![]() Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 Copyright 2000 MSC1644.PDF 2000-12-20 SD1429 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW R F P R O D UCT S DI VI SI ON DESCRIP T ION DESCRIP T ION DESCRIP T ION DESCRIP T ION The SD1429 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes “Tuned Q” technology which consists of an input matching network on the base to achieve optimum gain and broadband characteristics. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURE S KEY FEATURE S KEY FEATURE S KEY FEATURE S ! 470 MHz ! 12.5 Volts ! Common Emitter ! POUT = 12 W Min. ! GP = 7.8 dB Gain APPLICATIONS/BENEFIT APPLICATIONS/BENEFIT APPLICATIONS/BENEFIT APPLICATIONS/BENEFITS SS S ! UHF Mobile Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 16 V VCES Collector-Emitter Voltage 36 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 3.4 A PDISS Power Dissipation 37.5 W TJ Junction Temperature +200 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 4.6 °C/W .500 6LFL (M111) EPOXY SEALED 4 1 2 3 1. Collector 2. Emitter 3. Base 4. Emitter PIN CONNECTION |
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Similar Description - SD1429 |
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